器件名称: 1SS106
功能描述: Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小: 26.68KB 共5页
简 介:1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal.
Ordering Information
Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35
Outline
H
1 2nd band Cathode band
2
1. Cathode 2. Anode
1SS106
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Notes: 1.
*1
Symbol IF IR C η —
Min 4.5 — — 70 100
Typ — — — — —
Max — 70 1.5 — —
Unit mA A pF % V
Test Condition VF = 1V VR = 6V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k, CL = 20pF C = 200pF, Both forward and reverse direction 1 pulse.
Failure criterion; IR ≥ 140A at V R = 6V
2
1SS106
Main Characteristic
-1 -2
10
10
Forward current I F (A)
10
-3
Reverse current I R (A)
10
-2
10
-3
10
-4
10
-4
10
-5
10
-5
0
0.4
0.8
1.2
1.6
2.0
10
-6
0
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
2 4 8 6 Reverse voltage V R (V)
10
Fig.2 Reverse current Vs. Reverse voltage
100 f=1MHz 80
Rectifier efficiency η (%)
10
Capacitance C (pF)
60
1.0
40
20
10
-1
10-1
0 1.0 Reverse voltage V R (V) 10 0 0.5 1.0 1.5 2.0 2.5 3.0 Input……
