器件名称: Z123
功能描述: Silicon NPN Phototransistor
文件大小: 43.29KB 共2页
简 介:Phototransistors
PNZ123S
Silicon NPN Phototransistor
Unit : mm
For optical control systems
4.1±0.3 2.0±0.2 12.5 min.
3.0±0.2
Can be combined with LN62S to form an photo interrupter Features
High sensitivity Low dark current Fast response : tr = 3.5 s (typ.) Small size ( 3) ceramic package
0.3±0.05 0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW C C
2
1 1: Emitter 2: Collector
Electro-Optical Characteristics (Ta = 25C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time
*1 *2
Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE = 10V
Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100
min 400
typ 1 800 30 3.5 5
max 100 700
Unit nA A nm deg. s s
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
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