器件名称: Z1150
功能描述: SILICON ZENER DIODES
文件大小: 27.96KB 共2页
简 介:1N4728 - 1N4764 Z1110 - Z1200
VZ : 3.3 - 200 Volts PD : 1 Watt
FEATURES :
* Complete voltage range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7) 0.080 (2.0)
1.00 (25.4) MIN.
0.205 (5.2) 0.166 (4.2)
MECHANICAL DATA
* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherw ise specified
Rating
DC Power Dissipation at TL = 50 °C (Note1) Maximum Forward Voltage at IF = 200 mA Maximum Thermal Resistance Junction to Ambient Air (Note2) Junction Temperature Range Storage Temperature Range
Symbol
PD VF RθJA TJ Ts
Value
1.0 1.2 170 - 55 to + 175 - 55 to + 175
Unit
Watt Volts K/W °C °C
Note : (1) TL = Lead temperature at 3/8 " (9.5mm) from body (2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case. Fig. 1 POWER TEMPERATURE DERATING CURVE 1.25
L = 3/8" (9.5mm)
PD, MAXIMUM DISSIPATION (WATTS)
1.00 0.75 0.50 0.25 0 25 50 75 100 125 TL, LEAD TEMPERATURE (°C) 150 175
UPDATE : SEPTEMBER 9, 2000
ELECTRICAL CHARACTERISTICS
Rating at = 25 ° C ambient temperature unless otherwise specified Nominal Zener Voltage VZ @ IZT IZT (V) (mA……
