器件名称: WV3EG64M64ETSU-D4
功能描述: 512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM
文件大小: 177.63KB 共12页
简 介:White Electronic Designs
WV3EG64M64ETSU-D4
PRELIMINARY*
512MB – 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM
FEATURES
Fast data transfer rate: PC3200 & PC2700 Clock speeds of 200MHz & 166MHz Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency : DDR400 (3 clock), DDR333 (2.5 clock) Programmable Burst Length (2, 4 or 8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh, 7.8s refresh interval (8K (64ms refresh) Serial presence detect (SPD) with EEPROM Serial presence detect with EEPROM VCC = VCCQ = +2.5V ±0.2V (166MHz) VCC = VCCQ = +2.6V ±0.1V (200MHz) Gold edge contacts JEDEC standard 200 pin, small-outline, SO-DIMM package PCB height option: D4: 31.75 mm (1.25”) TYP
* This product is under development, is not qualied or characterized and is subject to change without notice.
DESCRIPTION
The WV3EG64M64ETSU is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eight 64Mx8 DDR SDRAMs TSOP-II packages mounted on a 200 pin FR4 substrate. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
NOTE: Consult factory for availability of: RoHS compliant products Vendor source control options Industrial temperature op……
