器件名称: WV3EG64M64ETSU-D3
功能描述: 512MB - 64Mx64 DDR SDRAM UNBUFFERED
文件大小: 236.16KB 共10页
简 介:White Electronic Designs
WV3EG64M64ETSU-D3
PRELIMINARY*
512MB – 64Mx64 DDR SDRAM UNBUFFERED
FEATURES
Double-data-rate architecture PC2700 @ CL 2.5 Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input. Auto and self refresh, (8K/64ms refresh) Serial presence detect with EEPROM Power supply: VCC = VCCQ = +2.5V ±0.2V 184 pin DIMM package D3 PCB height: 28.58mm (1.125")
NOTE: Consult factory for availability of: RoHS compliant products Vendor source control options Industrial temperature option * This product is under development, is not qualied or characterized and is subject to change without notice.
DESCRIPTION
The WV3EG64M64ETSU is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eight 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin substrate. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
OPERATING FREQUENCIES
DDR333 @CL=2.5 Clock Speed CL-tRCD-tRP 166MHz 2.5-3-3
August 2005 Rev. 1
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WV3EG64M64ETSU-D3
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