器件名称: W4601DW
功能描述: Dual Epitaxial Planer Transistor
文件大小: 319.04KB 共7页
简 介:W4601DW
Dual Epitaxial Planer Transistor
3 2 1
6 5
4
Features:
* Both a 2SA1037AK chip and 2SC2412K chip in a SOT-363
Tr 2
4 5 6
Tr 1
1
2
3
SOT-363(SC-88)
PNP+NPN
Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous
NPN PNP NPN PNP NPN PNP NPN PNP
Symbol
VCEO VCBO VEBO lC
Value
50 -50 60 -60 6.0 -6.0 150 -150
Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board, TA=25 J
(1)
Symbol
PD R q JA TJ,Tstg
Max
380 328 -55 to +150
Unit
mW J/W J
Thermal Resistance, Junction to Ambient Junction and Storage, Temperature 1. FR-5 = 1.0 x 0.75 x 0.062 in
Device Marking
WSD4601DW = 5C
WEITRON
http://www.weitron.com.tw
W4601DW
Electrical Characteristics (TA=25 C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (lC = 1.0mA) (lC = -1.0mA) Collector-Base Breakdown Voltage (lC = 50 A) (lC = -50 A) Emitter-Base Breakdown Voltage (lE = 50 A) (lE = -50 A) Collector Cutoff Current (VCB = 60 V) (VCB = -60 V) Emitter Cutoff Current (VEB = 7.0V) (VEB = -7.0V) NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP
V(BR)CEO
50 -50 60 -60 6.0 -6.0 -
-
0.1 -0.1 0.1 -0.1
V
V(BR)CBO
V
V(BR)EBO
V
lCBO
mA
lEBO
mA
On Characteristics
DC Current Gain
(lC = 1.0 mA, VCE = 6.0V) (lC = -1.0 mA, VCE = -6.0V) NPN PNP hFE
120 120 560 560
Collector-Emitter Saturation Voltage
(lC = 50 mA, lB = 5.0mA) (lC = 50 mA, lB……
