器件名称: W4501DW
功能描述: Epitaxial Planer Transistor Silicon NPN
文件大小: 216.21KB 共4页
简 介:W4501DW
Epitaxial Planer Transistor Silicon NPN
P b Lead(Pb)-Free
1
4 5 6 3 2 1
6 5
4
2
3
Features:
* Both 2SC2412K Chip x 2 in a SOT-363
NPN+NPN
SOT-363(SC-88)
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 50 60 7 150 Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics
(1)
Symbol PD R θ JA TJ,Tstg
Max 380 328 -55 to +150
Unit mW C/W C
Total Device Dissipation TA=25C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
Device Marking
W4501DW=5H
Electrical Characteristics Off Characteristics
(TA=25 C Unless Otherwise noted) Symbol Min Max Unit
Characteristics
Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc,IB=0) Collector-Base Breakdown Voltage (IC=50 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=50 uAdc, IC=0) Emitter Cutoff Current (VEB =7.0Vdc) Collector Cutoff Current (VCB=60Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width< =300uS, Duty Cycle< =2.0%
V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO
50 60 7.0
0.1 0.1
Vdc Vdc Vdc Adc Adc
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1/4
30-Nov-05
W4501DW
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
On Characteristics
DC Current Gain (VCE= 6.0Vdc, IC= 1.0mAdc) Collector-Emitter Saturation Voltage (IC= 50mAdc, IB= 5.0mAdc) hFE VCE(sat) ……
