器件名称: W4401DW
功能描述: Epitaxial Planer Transistor PNP Silicon
文件大小: 229.78KB 共5页
简 介:W4401DW
Epitaxial Planer Transistor PNP Silicon
3 2 1
6 5
4
1
4 5 6
2
3
SOT-363(SC-88)
PNP+PNP
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -50 -60 -6.0 -150 Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
(1)
Symbol PD R θ JA TJ,Tstg
Max 380 328 -55 to +150
Unit mW C/W C
Device Marking
W4401DW=5K
Electrical Characteristics
(TA=25 C Unless Otherwise noted) Symbol Min Max Unit
Characteristics
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-50 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=-50 uAdc, IC=0) Emitter Cutoff Current (VEB =-6.0 Vdc) Collector Cutoff Current (VCB=-60Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint. 2. Pulse Test:Pulse Width< =300uS, Duty Cycle< =2.0%
V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO
-50 -60 -6.0
-0.1 -0.1
Vdc Vdc Vdc nAdc nAdc
-
WEITRON
W4401DW
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
On Characteristics
DC Current Gain (IC= -1 mAdc, VCE= -6.0Vdc) Collector-Emitter Saturation Voltage (IC= -50 mAdc, IB= -5.0mAdc) hFE VCE(sat) 120 560 -
-
-0.5
Vdc
Small-signal Characteristics
Current-Gain-Bandwidth Produc……
