器件名称: W3NRD0T-0200-X
功能描述: GaN Substrate Products
文件大小: 88.58KB 共1页
简 介:GaN Substrate Products
GaN free-standing substrates are offered in multiple sizes and grades. All wafers are nominally on-axis and have a polished gallium surface. Wafer orientation in plane is indicated with a flat as shown below. A description of the measurement techniques used for grading and additional terms and conditions follow the wafer specifications.
2” (50.8mm) Gallium Nitride Substrates
N-type GaN substrates typically have a resistivity of 0.01–0.1 Ω-cm. Si and O are the primary donor impurities.
Part Number W3NRD0T-0200-x Dimensions (mm) 50.8 Thickness (microns) 450 (± 50) Dislocation Density (cm-2) ≤ 1 x 107 Macroscopic Defect Density (cm-2) ≤ 25 Usable Surface Area > 80%
2” (50.8mm)
<11-20>
Measurement Techniques and Product Details
Physical dimensions, macroscopic defect density, resistivity and usable surface area are measured for every wafer. In addition, dislocation density is measured for wafer batches. A description of the measurement procedures is provided below. Wafers may contain chips or flawed areas that reduce the usable surface area. The usable area is visually determined. Material characteristics are measured in the usable portion of the wafers. Wafer thickness is measured in five predetermined locations for 2” wafers and in the center of 10 mm wafers. The average of the measurements is reported on the datasheets. Dislocation data is measured by etch and optical imaging and/or atomic force microscopy and/or CL. Following etching or polishing, ……
