器件名称: W3H32M64E-400ESI
功能描述: 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
文件大小: 231.38KB 共6页
简 介:White Electronic Designs
W3H32M64E-XSBX
ADVANCED*
32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667*, 533, 400 Package: 208 Plastic Ball Grid Array (PBGA), 16 x 20mm 1.0mm pitch DDR2 Data Rate = 667*, 533, 400 Supply Voltage = 1.8V ± 0.1V Differential data strobe (DQS, DQS#) per byte Internal, pipelined, double data rate architecture 4-bit prefetch architecture DLL for alignment of DQ and DQS transitions with clock signal Four internal banks for concurrent operation (Per DDR2 SDRAM Die) Programmable Burst lengths: 4 or 8 Auto Refresh and Self Refresh Modes On Die Termination (ODT) Adjustable data – output drive strength Programmable CAS latency: 3, 4 or 5 Posted CAS additive latency: 0, 1, 2, 3 or 4
* This product is under development, is not qualied or characterized and is subject to change or cancellation without notice.
Write latency = Read latency - 1* tCK Commercial, Industrial and Military Temperature Ranges Organized as 32M x 64, user congurable as 2 x 32M x 32 Weight: W3H32M64E-XSBX - 2.5 grams typical
BENEFITS
62% SPACE SAVINGS vs. FPBGA Reduced part count 42% I/O reduction vs FPBGA Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability applications Upgradeable to 64M x 64 density (contact factory for information)
FIGURE 1 – DENSITY COMPARISONS Actual Size W3H32M64E-XSBX
11.0
White Electronic Designs W3H32M64E-XSBX
CSP Approach (mm)
11.0 11.0 11.0
19.0
90 FBGA
90 FBGA
90 FBGA
90 FBGA
20
16
S A V I N G ……
