器件名称: W3E32M72SR-266SBI
功能描述: 32Mx72 REGISTERED DDR SDRAM
文件大小: 717.95KB 共19页
简 介:White Electronic Designs
32Mx72 REGISTERED DDR SDRAM
FEATURES
Registered for enhanced performance of bus speeds of 200, 250, 266Mb/s Package: 208 Plastic Ball Grid Array (PBGA), 16 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Programmable Burst length: 2,4 or 8 Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (one per byte) DQS edge-aligned with data for READs; centeraligned with data for WRITEs DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Data mask (DM) pins for masking write data (one per byte) Programmable IOL/IOH option Auto precharge option Auto Refresh and Self Refresh Modes Commercial, Industrial and Military Temperature Ranges Organized as 32M x 72 Weight: W3E32M72SR-XSBX - 2.5 grams typical
W3E32M72SR-XSBX
BENEFITS
74% SPACE SAVINGS vs. TSOP Reduced part count 51% I/O reduction vs TSOP Glueless connection to PCI bridge/memory controller Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability applications Laminate interposer for optimum TCE match
GENERAL DESCRIPTION
The 256MByte (2Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DR……
