器件名称: W3E16M72SR-266BM
功能描述: 16Mx72 Registered DDR SDRAM
文件大小: 744.08KB 共16页
简 介:White Electronic Designs
16Mx72 Registered DDR SDRAM
FEATURES
Registered for enhanced performance of bus speeds of 200, 225, and 250 MHz Package: 219 Plastic Ball Grid Array (PBGA), 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Programmable Burst length: 2,4 or 8 Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (one per byte) DQS edge-aligned with data for READs; centeraligned with data for WRITEs DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Two data mask (DM) pins for masking write data Programmable IOL/IOH option Auto precharge option
W3E16M72SR-XBX
Auto Refresh and Self Refresh Modes Commercial, Industrial and Military Temperature Ranges Organized as 16M x 72 Weight: W3E16M72SR-XBX - 2.5 grams typical
BENEFITS
47% SPACE SAVINGS Glueless Connection to PCI Bridge/Memory Controller Reduced part count Reduced I/O count 49% I/O Reduction Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability applications Laminate interposer for optimum TCE match Upgradeable to 32M x 72 density (contact factory for information)
* This product is subject to change without notice.
Monolithic Solution
22.3 11.9 66 TSOP 22.3 66 TSOP 12.6 8.3 48 TSOP
Actual Size S A V I N G S
11.9……
