器件名称: W30M40CT
功能描述: 30A Schottky Barrier Rectifier
文件大小: 201.81KB 共3页
简 介:PROVISIONAL
SemiWell Semiconductor
W30M40CT
Symbol
30A Schottky Barrier Rectifier
Features
1!
Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection Lead solderable per MIL-STD202,method 208 guaranteed Lead temperature for soldering purpose 250°C Max for 10 second Weight : 5.6 gram (approximately)
b :
!
2
3!
b :
TO-247
General Description
The W30M40CT schottky Rectifier has been designed for applcations requiring low forward voltage drop and switching power supply, dc-dc converter, free-wheeling diode, battery charging, polarity protection application.
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Absolute Maximum Ratings
Symbol
VRRM VR IF(AV) IFSM Eas TJ TSTG
Parameter
Repetitive Peak Reverse Voltage Maximum DC Reverse Voltage Average Forward Current @ TC = 100°C Per Diode Total Device
Value
40 40 15 30 275 17.5 - 65 ~ 125 - 65 ~ 150
Units
V V A A A mJ °C °C
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions half sinewave,single phase, 60Hz) Non-Repetitive Avalanche Energy @ TC=25°C , Vdd = 15V , L=18uH Maximum Junction Temperature Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction-to-Case ( per diode )
Value
1.5
Units
°C/W
Nov, 2002. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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W30M40CT
Electrical Characteristics
Symbol
Reverse Leakage Current IR VR = VRRM TC = 25 °C TC = 125 °……
