器件名称: W29C102Q-90B
功能描述: 64K 16 CMOS FLASH MEMORY
文件大小: 254.9KB 共21页
简 介:W29C102 64K × 16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C102 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations Fast page-write operations Low power consumption
128 words per page Page program cycle: 10 mS (max.) Effective word-program cycle time: 39 S Optional software-protected data write
Fast chip-erase operation: 50 mS Read access time: 70/90/120 nS Typical page program/erase cycles: 1K/10K Ten-year data retention Software and hardware data protection
Active current: 25 mA (typ.) Standby current: 20 A (typ.)
Automatic program timing with internal VPP
generation
End of program detection
Toggle bit Data polling
Latched address and data TTL compatible I/O JEDEC standard word-wide pinouts Available packages: 40-pin 600 mil DIP, TSOP
and 44-pin PLCC
-1-
Publication Release Date: March 1998 Revision A3
W29C102
PIN CONFIGURATIONS
NC CE DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 GND DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 OE
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33
BLOCK DIAGR……
