器件名称: W06M
功能描述: SILICON BRIDGE RECTIFIERS
文件大小: 79.05KB 共2页
简 介:BL
FEATURES
GALAXY ELECTRICAL
W005M(G) - - - W10M(G)
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV Surge overload rating to 50 Amperes peak
WOM
A .150(3.8) .130(3.3) .305(7.75) .265(6.73) .220(6.73) .180(4.6) B .360(9.1) .340(8.6) .395(10.0) .355(9.0) .340(8.6) .300(7.6) B RB15 WO WOM
Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product Mounting Position: Any
MIN 1.27(32.3) MIN 1.20(30.5) A
Glass passivated chip junctions
POS. LEAD .032(.81) .028(.71) DIA .220 .180 .220 .180 (5.6) (4.6) (5.6) (4.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
W005M W01M W02M W04M W06M W08M W10M UNITS
Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard Output current @TA =25
VRRM VRMS VDC IF(AV)
50 35 50
100 70 100
200 140 200
400 280 400 1.5
600 420 600
800 560 800
1000 700 1000
V V V A
Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100
IFSM
50.0
A
VF IR TJ TSTG
1.0 10.0 1.0 - 55 ---- + 125 - 55 ---- + 150
V μA mA
Operating junction temperature range Storage temperature range
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