器件名称: TC2481
功能描述: 0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
文件大小: 203.01KB 共4页
简 介:TC2481
REV4_20070507
0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
27 dBm Typical Output Power at 6 GHz 11 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 37 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 37 % at 6 GHz Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 m, Wg = 1.2 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested
PHOTO ENLARGEMENT
Micro-X Metal Ceramic Package
DESCRIPTION
The TC2481 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol P1dB GL IP3 PAE IDSS gm VP Rth CONDITIONS Output Power at 1dB Gain Compression Point, f = 6GHz VDS = 8 V, IDS = 120 mA Linear Power Gain , f = 6GHz VDS = 8 V, IDS = 120 mA Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 120 mA, *PSCL = 14 dBm Power Added Efficiency at 1dB Compression Power, f = 6GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 2.4 mA
15 MIN 26.5 TYP 27 11 37 37 300 200 -1.7** 18 50 MAX UNIT dBm dB dBm % mA mS Volts Volts °C/W
BVDGO Drain-Gate Breakdown Voltage at IDGO =0.6 mA Thermal Resistance
Note: * PSCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off ……
