器件名称: SZP-3026Z
功能描述: 3.0-3.8GHz 2W InGaP Amplifier
文件大小: 378.6KB 共10页
简 介:Preliminary
Product Description
Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 3.0-3.8GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product features a RoHS Compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.
SZP-3026Z
3.0-3.8GHz 2W InGaP Amplifier
Pb
RoHS Compliant & Green Package
Proprietary SOF-26 Package
Product Features
P1dB = 33.6dBm @ 5V 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA Pout = 27dBm @ 2.5% EVM, Vcc 6V, 513mA On-chip Output Power Detector
Functional Block Diagram
Vcc = 5V
RFOUT
Input Prematched to ~5 ohms Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework Power up/down control < 1μs
SZP-3026
RFIN Active Bias
Vbias = 5V
Applications
P ower Detector
P ower Up/Dow n Control
802.16……
