器件名称: SZA-2044
功能描述: 2.0-2.7 GHz 5V 1W Power Amplifier
文件大小: 251.49KB 共8页
简 介:Product Description
Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11b/g and 801.16 equipment in the 2.0-2.7 GHz bands. It can run from a 3V to 5V supply. Optimized on-chip impedance matching circuitry provides a 50 nominal RF input impedance. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness.
SZA-2044
2.0-2.7 GHz 5V 1W Power Amplifier
4mm x 4mm QFN Package
Product Features
802.11g 54Mb/s Class AB Performance Pout = 22.5dBm @ 3% EVM, 5V, 340mA Pout = 18dBm @ 3% EVM, 3.3V, 175mA On-chip Output Power Detector P1dB = 29.5dBm @ 5V, P1dB = 25dBm @ 3.3V Robust - Survives RF Input Power = +15dBm - 1000V ESD Class 1C Power up/down control < 1s
Functional Block Diagram
Vcc Pow er Up/Dow n Control
Activ e Bias
Activ e Bias
RFIN
RFOUT
Applications
Pow er Detector Vout
Key Specifications
Symbol fO P1dB S21 Pout NF IM3 IRL ORL Vdet Range Icq IVPC Rth, j-l Parameters: Test Conditions, App circuit page 4 Z0 = 50, VCC = 5.0V, Iq = 300mA, TBP = 30C Frequency of Operation Output Power ……
