器件名称: STP19NM65N
功能描述: N-channel 650 V - 0.25
文件大小: 532.84KB 共19页
简 介:STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N
N-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh Power MOSFET
Features
Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 < 0.27 < 0.27 < 0.27 < 0.27 ID
3
15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A
1
2
3 12
TO-220
3 1 2
IPAK
TO-220FP
3 1
2 3
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
DPAK
1
TO-247
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices implements the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Table 1.
Device summary
Order codes STI19NM65N Marking 19NM65N 19NM65N 19NM65N 19NM65N 19NM65N Package IPAK TO-220FP TO-220 DPAK TO-247 Packaging Tube Tube Tube Tape and reel Tube
STF19NM65N STP19NM65N STB19NM65NT4 STW19NM65N
February 2008
Rev 1
1/19
www.st.com 19
Contents
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . ……
