器件名称: STP16NB25FP
功能描述: N - CHANNEL 250V - 0.220ohm - 16A - TO-220/TO-220FP PowerMESH MOSFET
文件大小: 105.3KB 共9页
简 介:
STP16NB25 STP16NB25FP
N - CHANNEL 250V - 0.220 - 16A - TO-220/TO-220FP PowerMESH MOSFET
TYPE ST P16NB25 ST P16NB25FP
s s s s s
V DSS 250 V 250 V
R DS(on) < 0.28 < 0.28
ID 16 A 8 A
TYPICAL RDS(on) = 0.220 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2
3 1 2
DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1) V ISO Ts tg Tj March 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP16NB25 ST P16NB25F P 250 250 ± 30 16 10 64 140 1.12 5.5……
