器件名称: STP135N10
功能描述: N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
文件大小: 204.89KB 共8页
简 介:N-CHANNEL 100V - 0.007 - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
TYPE STB135N10 STP135N10
s s s s
STB135N10 STP135N10
TARGET DATA
VDSS 100 V 100 V
RDS(on) <0.009 <0.009
ID 135 A(*) 135 A(*)
TYPICAL RDS(on) = 0.007 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
3 1
3 1 2
D2PAK TO-263 (Suffix “T4”)
TO-220
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode’s reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Telecom and Industrial.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s PRIMARY SWITCH IN TELECOM DC-DC CONVERTER s HIGH-EFFICIENCY DC-DC CONVERTERS s 42V AUTOMOTIVE APPLICATIONS s SYNCHRONOUS RECTIFICATION s DIESEL INJECTION s PWM UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(*) ID IDM(1) Ptot dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Va……
