器件名称: STP12NM50N
功能描述: N-channel 500V - 0.29
文件大小: 510.43KB 共18页
简 介:STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N
N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh Power MOSFET
General features
Type STB12NM50N STD12NM50N STF12NM50N STP12NM50N
■ ■ ■
VDSS (@Tjmax) 550V 550V 550V 550V
RDS(on) <0.38 <0.38 <0.38 <0.38
ID 11A 11A 11A (1) 11A
3 1
1 3 2
3 1
DPAK
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistancel
DPAK
3 1 2
TO-220FP
Description
This series of devices is realized with the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STB12NM50N STD12NM50N STF12NM50N STP12NM50N Marking B12NM50N D12NM50N F12NM50N P12NM50N Package DPAK DPAK TO-220FP TO-220 Packaging Tape & reel Tape & reel Tube Tube
November 2006
Rev 7
1/18
www.st.com 18
Contents
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
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