器件名称: STP12NK30Z
功能描述: N-CHANNEL 300V - 0.36ohm - 9A - TO-220 Zener-Protected SuperMESH
文件大小: 283.39KB 共8页
简 介:STP12NK30Z
N-CHANNEL 300V - 0.36 - 9A - TO-220 Zener-Protected SuperMESHPower MOSFET
TYPE STP12NK30Z
s s s s s s s
VDSS 300 V
RDS(on) < 0.4
ID (1) 9A
Pw (1) 90 W
TYPICAL RDS(on) = 0.36 EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
3 1 2
TO-220
DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS LIGHTING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s HIGH CURRENT, HIGH SPEED SWITCHING
s
ORDERING INFORMATION
SALES TYPE STP12NK30Z MARKING P12NK30Z PACKAGE TO-220 PACKAGING TUBE
December 2002
1/8
STP12NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID IDM (1) PTOT VESD(G-S) dv/dt (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value……
