器件名称: STP120NF04
功能描述: N-CHANNEL 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET
文件大小: 296.9KB 共11页
简 介:STP120NF04
N-CHANNEL 40V - 0.0047 - 120A TO-220 STripFETII MOSFET
Table 1: General Features
TYPE STP120NF04
s s s
Figure 1: Package
ID (1) Pw
VDSS 40 V
RDS(on) < 0.0050
120 A 300 W
TYPICAL RDS(on) = 0.0047 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
3
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED
1
2
TO-220
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Part Number STP120NF04 Marking P120NF04 Package TO-220 Packaging TUBE
Rev. 1 February 2005 1/11
STP120NF04
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID (#) ID IDM ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 40 40 ± 20 120 120 480 300 2 6 1.2 -55 to 175 Unit V V V A A A W W/°C V/ns J °C
( ) Pulse width limited by safe operating area (1) ISD ≤120A, di/dt ≤300A/s, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25°C,……
