器件名称: STP11NM60FP
功能描述: N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh
文件大小: 548.57KB 共12页
简 介:STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4-11A TO-220/TO-220FP/D2PAK/I2PAK MDmeshPower MOSFET
TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS 600 V 600 V 600 V 600 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 ID 11 A 11 A 11 A 11 A
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TYPICAL RDS(on) = 0.4 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
TO-2……
