器件名称: STP11NM60AFP
功能描述: N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh
文件大小: 367.95KB 共11页
简 介:N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAK MDmeshPower MOSFET
TYPE STP11NM60A STP11NM60AFP STB11NM60A-1
n n n n
STP11NM60A STP11NM60AFP - STB11NM60A-1
VDSS 600 V 600 V 600 V
RDS(on) <0.45 <0.45 <0.45
ID 11 A 11 A 11 A
3 1 2
TYPICAL RDS(on) = 0.4 HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
3 12
TO-220
3 1 2
I2PAK
DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 MARKING P11NM60A P11NM60AFP B11NM60A PACKAGE TO-220 TO-220FP I2PAK PACKAGING TUBE TUBE TUBE
March 2002
1/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STP11NM60A STB11NM60A-1
Value
STP11NM60AFP
Unit
VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C ……
