器件名称: STP10NM65N
功能描述: N-channel 650 V, 0.43
文件大小: 527.2KB 共17页
简 介:STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N
N-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
Features
Type STD10NM65N STF10NM65N STP10NM65N STU10NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 < 0.48 < 0.48 < 0.48 ID
2 3
3 1 2
9A 9 A(1) 9A 9A
1
TO-220
IPAK
1. Limited only by maximum temperature allowed ■ ■ ■
3 1
3 1 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1.
TO-220FP
DPAK
Application
■
Internal schematic diagram
Switching applications
Description
This series of devices implements the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking 10NM65N 10NM65N 10NM65N 10NM65N Package DPAK TO-220FP TO-220 IPAK Packaging Tape & reel Tube Tube Tube
Order codes STD10NM65N STF10NM65N STP10NM65N STU10NM65N
October 2008
Rev 3
1/17
www.st.com 17
Contents
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 7
3 4 5 6
Test c……
