器件名称: STP10NK60Z
功能描述: N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
文件大小: 409.25KB 共19页
简 介:STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z
N-CHANNEL 600V-0.65-10A - TO220/FP-D/IPAK-TO-247 Zener-Protected SuperMESH MOSFET
General features
Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z
s s s s s s
Package
RDS(on) <0.75 <0.75 <0.75 <0.75 <0.75 ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156
VDSS 600 600 600 600 600 V V V V V
3 1 2
1 2
3
3 2 1
TO-220
TO-220FP TO-247
TYPICAL RDS(on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEABILITY
3 1
3 12
DPAK
IPAK
Internal schematic diagram
Description
The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
Applications
s s
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC LIGHTING
s
July 2005
Rev 1 1/19
www.st.com 19
1 Absolute maximum ratings
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1
Table 1.
Absolute maximum ratings
Absolute maximum ratings
Parameter Value TO-220/D/IPAK TO-220FP VDS VDGR VGS ID ID IDM Note 2 PTOT Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain……
