器件名称: STP100NF04L
功能描述: N-CHANNEL 40V - 0.0036 ohm - 100A TO-220 STripFET
文件大小: 268.03KB 共8页
简 介:N-CHANNEL 40V - 0.0036 - 100A TO-220 STripFET II POWER MOSFET
TYPE STP100NF04L
s s s s
STP100NF04L
VDSS 40 V
RDS(on) <0.0042
ID 100 A
TYPICAL RDS(on) = 0.0036 LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE
3 1 2
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(*) ID IDM() Ptot dv/dt
(1)
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 40 40 ± 16 100 70 400 300 2 3.6 1.4 -65 to 175 175
(1) ISD ≤100A, di/dt ≤240A/s, VDD ≤ 32V, T j ≤ T JMAX (2) Starting T j = 25 oC, IAR = 50A, V DD= 30V
Unit V V V A A A W W/°C V/ns J °C °C
EAS (2) Tstg Tj
() Pulse width limited by safe operating area.
(*) Current Limited by package
February 2002
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