器件名称: STP100NF03L-03
功能描述: N-CHANNEL 30V - 0.0026 W -100A D
文件大小: 393.28KB 共11页
简 介:N-CHANNEL 30V - 0.0026 -100A DPAK/IPAK/TO-220 STripFET II POWER MOSFET
TYPE STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-01
s s s s s
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
VDSS 30 V 30 V 30 V
RDS(on) <0.0032 <0.0032 <0.0032
ID 100 A 100 A 100 A
3 1
3 12
s
TYPICAL RDS(on) = 0.0026 LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
D2PAK TO-263 (Suffix “T4”)
3 1 2
I2PAK TO-262 (Suffix “-1”)
TO-220
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(1) ID(1) IDM() Ptot EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature
INTERNAL SCHEMATIC DIAGR……
