器件名称: 1N758
功能描述: SILICON ZENER DIODES
文件大小: 76.04KB 共2页
简 介:Transys
Electronics
L I M I T E D
SILICON ZENER DIODES
1N746 to 1N759 DO-35 400mW
Hermetically Sealed Glass Package Zener Diodes
ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT ZV 3.3 to 12 V Zener Voltage PD 400 mW D C Power Dissipation 3.2 mW/deg C Derating Above 50 deg C Tj,Tstg -65 to +175 deg C Operating & Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified , VF <1.5V @ 200mA Device Nominal* Zener Maximum Maximum @ VR Maximum Typ Type# Zener Test Zener Reverse Current Zener Temp (1) Voltage Current Impedance @25 deg C @ +150 deg C Current Coeff of Zener VZ @ IZT IZT Zzt @ IZT max max IZM Voltage *vz (V) (mA) (Ohms) (uA) (uA) (V) (mA) (% deg C) 1N746 3.3 20 28 10 30 1.0 110 -0.066 1N747 3.6 20 24 10 30 1.0 100 -0.058 1N748 3.9 20 23 10 30 1.0 95 -0.046 1N749 4.3 20 22 2.0 30 1.0 85 -0.033 1N750 4.7 20 19 2.0 30 1.0 75 -0.015 1N751 5.1 20 17 1.0 20 1.0 70 +-0.010 1N752 5.6 20 11 1.0 20 1.0 65 +0.030 1N753 6.2 20 7 0.1 20 1.0 60 +0.049 1N754 6.8 20 5 0.1 20 1.0 55 +0.053 1N755 7.5 20 6 0.1 20 1.0 50 +0.057 1N756 8.2 20 8 0.1 20 1.0 45 +0.060 1N757 9.1 20 10 0.1 20 1.0 40 +0.061 1N758 10 20 17 0.1 20 1.0 35 +0.062 1N759 12 20 30 0.1 20 1.0 30 +0.062 Note(1) :- No Suffix +-10% Suffix A +- 5% * Pulse Condition : 20ms
