器件名称: U2703
功能描述: POWER MOSFET
文件大小: 173.68KB 共10页
简 介:PD- 91335D
IRLR/U2703
HEXFET Power MOSFET
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Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2703) Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 30V
G S
RDS(on) = 0.045 ID = 23A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D-Pak TO-252AA I-Pak TO-251AA
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
23 16 96 45 0.30 ± 16 77 14 4.5 5.0 -55 to + 175 300 (1.6mm ……
