器件名称: U20GL2C53A
功能描述: TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
文件大小: 134.74KB 共4页
简 介:U20GL2C53A
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
U20GL2C53A
Switching Mode Power Supply Application Converter&Chopper Application
Repetitive peak reverse voltage: VRRM = 400 V Average output recified current: IO = 20 A Ultra fast reverse-recovery time: trr = 35 ns (max) Low switching losses and output noise. Power surface mount device for thin flat package. “TFP” (TOSHIBA designation) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Repetitive peak reverse voltage Average output recified current Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Symbol VRRM IO IFSM Tj Tstg Rating 400 20 100 (50 Hz) 110 (60 Hz) -40 to 150 -40 to 150 Unit V A A
JEDEC
°C °C
― ― 12-9B1A
JEITA TOSHIBA
Weight: 0.74 g (typ.)
Polarity
③K
*①A1
②A2
*: Common Terminal
1
2003-02-17
U20GL2C53A
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM trr Rth (j-c) Test Condition IFM = 10 A VRRM = 400 V IF = 2 A, di/dt = -50 A/ms DC Total, Junction to Case Min Typ. Max 1.8 50 35 1.5 Unit V mA ns °C/W
Note: VFM, IRRM, trr: A value of one cell.
Marking
※1 ※2 ※1 ※2 ※3 ※3 A Lot Number Month (starting from alphabet A) Year (last number of the christian era) MARK 20GL2C TYPE U20GL2C53A
Standard Soldering Pad
8.0 unit: mm
2.5
2.0
3.2
3.8
2.0
2.0
6.0
2
2003-02-17
U20GL2C53A
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