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U20GL2C53A

器件名称: U20GL2C53A
功能描述: TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
文件大小: 134.74KB    共4页
生产厂商: TOSHIBA
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简  介:U20GL2C53A TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type U20GL2C53A Switching Mode Power Supply Application Converter&Chopper Application Repetitive peak reverse voltage: VRRM = 400 V Average output recified current: IO = 20 A Ultra fast reverse-recovery time: trr = 35 ns (max) Low switching losses and output noise. Power surface mount device for thin flat package. “TFP” (TOSHIBA designation) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average output recified current Peak one cycle surge forward current (non-repetitive, sine wave) Junction temperature Storage temperature range Symbol VRRM IO IFSM Tj Tstg Rating 400 20 100 (50 Hz) 110 (60 Hz) -40 to 150 -40 to 150 Unit V A A JEDEC °C °C ― ― 12-9B1A JEITA TOSHIBA Weight: 0.74 g (typ.) Polarity ③K *①A1 ②A2 *: Common Terminal 1 2003-02-17 U20GL2C53A Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Reverse recovery time Thermal resistance Symbol VFM IRRM trr Rth (j-c) Test Condition IFM = 10 A VRRM = 400 V IF = 2 A, di/dt = -50 A/ms DC Total, Junction to Case Min Typ. Max 1.8 50 35 1.5 Unit V mA ns °C/W Note: VFM, IRRM, trr: A value of one cell. Marking ※1 ※2 ※1 ※2 ※3 ※3 A Lot Number Month (starting from alphabet A) Year (last number of the christian era) MARK 20GL2C TYPE U20GL2C53A Standard Soldering Pad 8.0 unit: mm 2.5 2.0 3.2 3.8 2.0 2.0 6.0 2 2003-02-17 U20GL2C53A iF ……
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器件名 功能描述 生产厂商
U20GL2C53A TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type TOSHIBA
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