器件名称: U20GL2C48A
功能描述: TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
文件大小: 93.37KB 共2页
简 介:U20GL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
U20GL2C48A
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
l Repetitive Peak Reverse Voltage l Average Output Rectified Current l Ultra Fast ReverseRecovery Time : VRRM = 400V : IO = 20A : trr = 35ns (Max) Unit: mm
l Low Switching Losses and Output Noise.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current Peak One Cycle Surge Forward Current (Sin Wave) Junction Temperature Storage Temperature Range SYMBOL VRRM IO IFSM Tj Tstg RATING 400 20 100 (50Hz) 110 (60Hz) 40~150 40~150 UNIT V A A °C °C
JEDEC JEITA TOSHIBA
― ― 1210D2A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Forward Recovery Time Thermal Resistance SYMBOL VFM IRRM trr tfr Rth (jc) IFM = 10A VRRM = 400V IF = 2A, di / dt = 50A / s IF = 1A DC Total, Junction to Case TEST CONDITION MIN ― ― ― ― ― TYP. ― ― ― ― ― MAX 1.8 50 35 100 1.6 UNIT V A ns ns °C / W
Note: VFM, IRRM, trr, tfr A value of one cell.
POLARITY
MARKING
*1 MARK A 20GL2C
*2
*3
1
2001-07-11
U20GL2C48A
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of t……