器件名称: U1DL49
功能描述: TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
文件大小: 122.17KB 共3页
简 介:U1DL49
TOSHIBA HIGH EFFICIENCY RECTIFIER (HED) SILICON EPITAXIAL JUNCTION TYPE
U1DL49
SWITCHING MODE POWER SUPPLY APPLICATIONS
l Repetitive Peak Reverse Voltage : VRRM = 200V l Average Forward Current l Low Forward Voltage : IF (AV) = 1.0A : VFM = 0.98V (Max) l Very Fast ReverseRecovery Time : trr = 60ns (Max) l Available to Reduce Switching Losses and Output Noise Unit: mm
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Reverse Voltage Average Forward Current Peak One Cycle Surge Forward Current (NonRepetitive) Junction Temperature Storage Temperature Range SYMBOL VRRM IF (AV) IFSM Tj Tstg RATING 200 1.0 15 (50Hz) 16.5 (60Hz) 40~150 40~150 UNIT V A A °C °C
JEDEC JEITA TOSHIBA Weight: 0.05g
MIN ― ― ― ― ― TYP. ― ― ― ― ―
― ― 35E1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Forward Recovery Time Thermal Resistance (Note 1) (Note 2) SYMBOL VFM IRRM trr tfr Rth (ja) TEST CONDITION IFM = 1.0A VRRM = 200V IF = 1A, di / dt = 20A / s IF = 1.0A Junction to Ambient
MAX 0.98 10 60 100 125
UNIT V A ns ns °C / W
Note 1: trr TEST CIRCUIT
Note 2: tfr TEST CIRCUIT
MARKING
WAVEFORM
WAVEFORM
CODE RD TYPE U1DL49
1
2001-07-11
U1DL49
2
2001-07-11
U1DL49
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical ……
