器件名称: SZP-2026Z
功能描述: 2.2-2.7GHz 2W InGaP Amplifier
文件大小: 558.09KB 共12页
简 介:Preliminary
Product Description
Sirenza Microdevices’ SZP-2026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 and 802.11 equipment in the 2.22.7GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level. It features an output power detector, on/off power control, ESD protection, excellent overall robustness and a proprietary hand reworkable and thermally enhanced SOF-26 package. This product features a RoHS Compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.
SZP-2026Z
2.2-2.7GHz 2W InGaP Amplifier
Pb
RoHS Compliant & Green Package
Proprietary SOF-26 Package
Product Features
P1dB = 33.5dBm @ 5V, 2.4GHz 802.11g 54Mb/s Class AB Performance Pout = 26dBm @ 2.5%EVM, Vcc 5V Pout = 27dBm @ 2.5% EVM, Vcc 6V On-chip Output Power Detector Input Prematched to ~5 ohms Proprietary Low Thermal Resistance Package Hand Solderable and Easy Rework Power up/down control < 1s
Functional Block Diagram
Vcc = 5V
SZP-2026 RFOUT RFIN Active Bias
Vbias = 5V
Applications
Power Detector
Power Up/Dow n Control
802.16 W……
