器件名称: U130A
功能描述: Advanced Power MOSFET
文件大小: 261.31KB 共7页
简 介:Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)
IRFR/U130A
BVDSS = 100 V RDS(on) = 0.11 ID = 13 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C) *
Ο Ο Ο
Value 100 13 8.2
1 O
Units V A A V mJ A mJ V/ns W W W/ C
Ο
52 + _ 20 225 13 4.1 6.5 2.5 41 0.32 - 55 to +150
O 1 O 1 O 3 O
2
Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
Ο
TJ , TSTG TL
Ο
C
300
Thermal Resistance
Symbol R θJC R θJA R θJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.08 50 110
Ο
Units
C /W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
1999 Fairchild Semiconductor Corporation
IRFR/U130A
Ο
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(……
