器件名称: STE70IE120
功能描述: Monolithic Emitter Switched Bipolar Transistor ESBT
文件大小: 144.16KB 共7页
简 介:STE70IE120
Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Power Module
Target data
General features
VCS(ON) 1V
■
IC 70A
RCS(ON) 0.014W ISOTOP
High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch, up to 150 kHz Ultra low CISS Low dynamic VCS(ON)
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Internal schematic diagram
Description
The STE70DE120 is manufactured in monolithic structure, to be used in industrial applications.
Applications
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Solar Welding
Order codes
Part number STE70IE120 Marking E70IE120 Package ISOTOP Packaging Tube
May 2007
Rev 1
1/7
www.st.com 7
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
Electrical ratings
STE70IE120
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot TSTG TJ VISO Parameter Collector-source voltage (VBS = VGS = 0V) Base-source voltage (IC = 0, VGS = 0V) Source-base voltage (IC = 0, VGS = 0V) Gate-source voltage Collector current Collector peak current (tp < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at TC = 25°C Storage temperature Maximum operating junction temperature Insulation withstand voltage (AC-RMS) from all four leads to external heatsink Value 1200 40 12 Unit V V V V A A A A W °C °C V
± 20
70 150 20 70 TBD -65 to 150 150 2500
1.1
Thermal data
Table 2. Thermal data
Symbol RthJ-case Rthc-h Parameter Thermal resistance j……
