器件名称: STE53NC50
功能描述: N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh
文件大小: 275.64KB 共8页
简 介:N-CHANNEL 500V - 0.070 - 53A ISOTOP PowerMeshII MOSFET
TYPE STE53NC50
n n n n n
STE53NC50
VDSS 500V
RDS(on) < 0.08
ID 53 A
TYPICAL RDS(on) = 0.07 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
n
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 53 33 212 460 3.68 3 2500 – 65 to 150 150
(1) ISD≤ 53A, di/dt ≤100 A/s, VDD≤ 24V, Tj ≤TjMAX
Unit V V V A A A W W/°C V/ns V °C °C 1/8
()Pulse width limited by safe operating area
STE53NC50
THERMAL DATA
Rthj-case Rthc-h Thermal Resistance Junction-case Max 0.272 0.05 ……
