器件名称: STE50DE100
功能描述: HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE
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简 介:STE50DE100
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE
Table 1: General Features
VCS(ON) 1.3 V
n
Figure 1: Package
RCS(ON) 0.026 W
IC 50 A
n
n n n
HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz ULTRA LOW CISS LOW DYNAMIC VCS(ON) ISOTOP
APPLICATION n INDUSTRIAL CONVERTERS n WELDING DESCRIPTION The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment.
Figure 2: Internal Schematic Diagram
Electrical Symbol Table 2: Order Code
Part Number STE50DE100 Marking STE50DE100 Package ISOTOP
Device Structure
Packaging TUBE
October 2004
Rev. 1
1/9
STE50DE100
Table 3: Absolute Maximum Ratings
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ VISO Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC ≤ 25 oC Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) from All Four Leads to External Heatsink Value 1000 40 12 ± 20 50 150 10 50 160 -65 to 150 150 2500 Unit V V V V A A A A W °C °C V
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