器件名称: STE48NM50
功能描述: N-CHANNEL 500V - 0.08ohm - 48A ISOTOP MDmesh
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简 介:N-CHANNEL 500V - 0.08 - 48A ISOTOP MDmeshPower MOSFET
TYPE STE48NM50
n n n n n n
STE48NM50
VDSS 500V
RDS(on) < 0.1
ID 48 A
TYPICAL RDS(on) = 0.08 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
ISOTOP
DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 48 30 192 450 3.6 15 –65 to 150 150
(1) ISD ≤48A, di/dt ≤400A/s, VDD ≤ V (BR)DSS, T j ≤ TJMA……
