器件名称: STE40NC60
功能描述: N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh
文件大小: 270.59KB 共8页
简 介:N-CHANNEL 600V - 0.098 - 40A ISOTOP PowerMeshII MOSFET
TYPE STE40NC60
n n n n n
STE40NC60
VDSS 600V
RDS(on) < 0.13
ID 40 A
TYPICAL RDS(on) = 0.098 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
n
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 40 23 160 460 3.68 3 2500 –65 to 150 150
(1) ISD≤ 40A, di/dt ≤100 A/s, VDD≤ 24V, Tj ≤TjMAX
Unit V V V A A A W W/°C V/ns V °C °C 1/8
()Pulse width limited by safe operating area
STE40NC60
THERMAL DATA
Rthj-case Rthc-h Thermal Resistance Junction-case Max 0.272 0.05 ……
