器件名称: STE250NS10
功能描述: N-CHANNEL 100V - 0.0045 W - 220A ISOTOP STripFET POWER MOSFET
文件大小: 297.7KB 共8页
简 介:N-CHANNEL 100V - 0.0045 - 220A ISOTOP STripFET POWER MOSFET
TYPE STE250NS10
s s s
STE250NS10
VDSS 100 V
RDS(on) <0.0055
ID 220A
TYPICAL RDS(on) = 0.0045 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
APPLICATIONS s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (AC-RMS) Storage Temperature Operating Junction Temperature Value 100 100 ± 20 220 156 880 500 4 3.5 2500 -55 to 150 150 Unit V V V A A A W W/°C V/ns V °C °C
() Pulse width limited by safe operating area.
(1 )ISD ≤220A, di/dt ≤200A/s, VDD ≤ V (BR)DSS, T j ≤ TJMAX.
September 2001
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STE250NS10
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.25 50 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 64 V) Max Value 220 800 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDS……
