器件名称: STP16A60
功能描述: Bi-Directional Triode Thyristor
文件大小: 623.53KB 共5页
简 介:SemiWell Semiconductor Bi-Directional Triode Thyristor
STP16A60
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) ◆ High Commutation dv/dt ◆ Non-isolated Type
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2.T2
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3.Gate
1.T1
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General Description
This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
TO-220
1
2
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Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition Ratings
600 TC = 98 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 16 155/170 120 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V °C °C g
Feb, 2003. Rev. 2
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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STP16A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -8.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gate Trigger Current VD = 6 V, RL=10 Ω
Conditi……
