器件名称: TZS4691
功能描述: Silicon Epitaxial Planar Z-Diodes
文件大小: 79.15KB 共6页
简 介:TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W
x
Type
Symbol PV IZ Tj Tstg
Value 500 PV/VZ 175 –65...+175
Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=100mA Type Symbol VF Min Typ Max 1.5 Unit V
Document Number 85613 Rev. 2, 01-Apr-99
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TZS4678...TZS4717
Vishay Telefunken
Type 1) Zener Voltage VZ @ IZ = 50mA Typ. 1) V 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 Max. Reverse Current IR 3) mA 7.5 5.0 4.0 2.0 1.0 0.8 7.5 7.5 5.0 4.0 10 10 10 10 10 10 1.0 1.0 1.0 1.0 0,05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Test Voltage VR 3) V 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 2.0 2.0 3.0 3.0 4.0 5.0 5.1 5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.8 10.6 11.4 12.1 12.9 13.6 14.4 15.2 16.7 18.2 19.0 20.4 21.2 22.8 25.0 27.3 29.6 32.6 Max. Zener Current IZM 2) mA 120 110 100 95 90 ……
