器件名称: TZMB51
功能描述: Silicon Epitaxial Planar Z-Diodes
文件大小: 76.45KB 共6页
简 介:TZMB...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D D D
Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise VZ–tolerance ± 2%
94 9371
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W
x
Type
Symbol PV IZ Tj Tstg
Value 500 PV/VZ 175 –65...+175
Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V
Document Number 85610 Rev. 3, 01-Apr-99
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TZMB...
Vishay Telefunken
Type TZMB... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 VZnom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT and V 2.35 to 2.45 2.64 to 2.76 2.94 to 3.06 3.24 to 3.36 3.52 to 3.68 3.82 to 3.98 4.22 to 4.38 4.60 to 4.80 5.00 to 5.20 5.48 to 5.72 6.08 to 6.32 6.66 to 6.94 7.35 to 7.65 8.04 to 8.36 8.92 to 9.28 9.80 to 10.20 10.78 to 11.22 11.76 to ……
