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   首页 > STMICROELECTRONICS > STB70NF03L-1

STB70NF03L-1

器件名称: STB70NF03L-1
功能描述: N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
文件大小: 405.83KB    共11页
生产厂商: STMICROELECTRONICS
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简  介:N-CHANNEL 30V - 0.0075 - 70A DPAK/IPAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB70NF03L STP70NF03L STB70NF03L-1 s s s s s STB70NF03L STP70NF03L STB70NF03L-1 VDSS 30 V 30 V 30 V RDS(on) < 0.0095 < 0.0095 < 0.0095 ID 70 A 70 A 70 A 3 1 3 12 TYPICAL RDS(on) = 0.0075 @ 10 V OPTIMAL RDS(on) x Qg TRADE-OFF @ 5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) D2PAK TO-263 (Suffix “T4”) 3 1 2 I2PAK TO-262 DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(#) ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanch……
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STB70NF03L-1 N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET STMICROELECTRONICS
STB70NF03L-1 N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET STMICROELECTRONICS
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