器件名称: ST704
功能描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
文件大小: 48.68KB 共2页
简 介:polyfet rf devices
ST704
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 125.0 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
11.5 A
RF CHARACTERISTICS ( 125.0 WATTS OUTPUT )
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 75 10:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 0.80 A, Vds = 28.0 V, F = Idq = 0.80 A, Vds = 28.0 V, F =
150 MHz 150 MHz
η
VSWR
Idq = 0.80 A, Vds = 28.0 V, F = 150 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedbac……
