器件名称: TLP176G_07
功能描述: Photocoupler GaAs Ired & PhotoMOSFET
文件大小: 189.33KB 共7页
简 介:TLP176G
TOSHIBA Photocoupler GaAs Ired & PhotoMOS FET
TLP176G
Modems In PC ModemFax Cards Telecommunications
Unit in mm
The TOSHIBA TLP176G consists of gallium arsenide infrared emitting diode optically coupled to a photoMOS FET in a SOP, which is suitable for surface mount assembly. The TLP176G is suitable for the modem applications which require space savings. Peak offstate voltage: 350V (min) Trigger LED current: 3mA (max) Onstate resistance: 35 (max) Isolation voltage: 1500Vrms (min) UL recognized: UL1577, file No. E67349 BSI approved : BS EN60065: 2002, certificate No.8753 BS EN60950-1: 2002, certificate No.8754 SEMKO approved: SS EN60065 SS EN60950 Option(V4)type TUV approved: DIN EN 60747-5-2 Certificate No.40009351 JEDEC EIAJ TOSHIBA Weight: 0.1 g ― ―
Pin Configuration (top view)
1 4 1-Form-A 4 3
Schematic
1 4
2 1. 2. 3. 4. : Anode : Cathode : Drain : Drain
3 1 2 2 3
1
2007-10-01
TLP176G
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Forward current Forward current derating (Ta ≥ 25°C) LED Pulse forward current (100μs pulse,100pps) Reverse voltage Junction temperature Offstate output terminal voltage Detector Onstate current Onstate current derating (Ta ≥ 25°C) Junction temperature Total power dissipation Total power dissupation derating(Ta ≥ 25°C) Storage temperature range Operating temperature range Lead soldering temperature(10 s) Isolation voltage (AC,1 min., R.H.≤ 60%) (Note 1) Symbol IF ΔIF / °C IFP VR Tj VOFF ION ΔlON / °C Tj PT ΔPT / °C ……
