器件名称: 618LP3E
功能描述: GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
文件大小: 326.58KB 共10页
简 介:HMC618LP3 / 618LP3E
v04.0508
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.75 dB Gain: 19 dB OIP3: 36 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm SMT Package: 9 mm2
5
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC618LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios
Functional Diagram
General Description
The HMC618LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3(E) shares the same package and pinout with the HMC617LP3(E) 0.55 - 1.2 GHz LNA. The HMC618LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3(E) is an ideal replacement for the HMC375LP3(E).
Electrical Specifi cations, TA = +25° C, Rbias = 10K
Vdd = 3 Vdc Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Int……
